The new TBD62783A series achieves the success of the TD62783 series of bipolar transistor arrays, reducing power loss by 40% and finding use in a wide range of applications, including LED units.

Toshiba will also launch the TBD62083A series with sink-output DMOS FET driver[4], as a successor to the TD62083 series of bipolar transistor arrays for applications including motors, relays, and LED drives.

Customer demand is growing for systems such as power supplies and ON/OFF controls that combine source-output and sink-output products. With the launch of these new devices, Toshiba is providing a DMOS FET transistor array for both output types.

The new devices operate without a base current, reducing inrush currents. Combined with their ability to accept high current densities while maintaining low resistance, DMOS FET devices increase efficiency and ensure reduced power losses.

All devices support high voltage, high current control with a maximum absolute output rating of 50V / 0.5A.

The devices are available in a range of packages including SOP18, DIP18 and SOL18 for surface mount applications and SSOP18 (0.65mm pitch) to allow the use of space-constrained designs.

To achieve the high levels of integration seen in these devices, Toshiba has applied the latest BICD technology [5]. The company has positioned it as the future trend for analog integrated circuits manufactured on its standard 8-inch production line, the wafer size widely used in the industry for mass production.

Notes:
[1] Toshiba Survey, as of September 29, 2015.
[2] DMOS FET: Dual Diffused MOSFET
[3] Source output: Push-type output current.
[4] Receiver output: Pull-type output current.
[5] BiCD: Process technology that enables the integration of bipolar, CMOS, and DMOS devices.

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