The new modules integrate 3.3 kV silicon carbide (SiC) mSiC® MOSFETs and Schottky diodes in a standard 62 mm package for efficient and direct power delivery from the medium voltage network to the server rack.
AI data centers continue to expand rapidly, but token generation is constrained by available power supply; at the same time, efficiency is a primary driver of return on investment. Traditional architectures based on bulky, low-frequency transformers add complexity, increase losses, and limit flexibility.Solid-state transformers represent a significant game-changer for power, as they reduce the number of conversion stages and enable increased system efficiency. The adoption of higher-voltage, rack-mounted DC power in next-generation AI centers further enhances the value of solid-state transformers (SSTs), which were designed to deliver regulated DC directly from the medium-voltage grid with fewer conversion stages.
Microchip's HV-D3 mSiC modules are specifically designed to meet these requirements. These modules utilize Microchip's mSiC MOSFET technology, which offers excellent RDS(on) stability with respect to temperature. The package provides 6 kV isolation, incorporates CTI 600-rated materials, and extends creepage distances, all designed to allow for safe high-voltage series connection. The silicon nitride (Si₃N₄) substrate enhances thermal connectivity and power cycling capabilities, helping engineers increase power density with less aggressive cooling.
“AI data centers continue to increase the demands on power delivery between the electrical grid and the GPU, making solid-state transformers increasingly important,” said Clayton Pillion, vice president of Microchip’s High Power Solutions business unit. “Our 3.3 kV HV-D3 mSiC power modules allow designers to reduce the number of devices connected in series by about half compared to other lower-voltage SiC devices when connected to 13.8 kV or 34.5 kV networks. These devices also fill a critical gap in the industrial market for 100–300 A products by integrating discrete SiC devices and much larger power modules.”.
The HV-D3 mSiC power modules are available in half-bridge and common-source configurations, with and without antiparallel Schottky diodes, for applications in the 100-300A range. Microchip's mSiC MOSFET technology offers balanced switching losses for both hard and soft switching topologies, making these devices well-suited for SST designs and other high-frequency, high-voltage systems.
While optimized for solid-state transformers in AI data centers, HV-D3 mSiC power modules also address a wide range of applications, including megawatt charging infrastructure for heavy vehicles, auxiliary power supplies for rail and heavy transport, medium-voltage motor drives, and industrial and defense power systems. These markets benefit from the same combination of high insulation, thermal robustness, and efficient power conversion.
Development Tools:
The 3.3 kV power modules are supported by an application note, a design guide, and device and simulation models for rapid prototyping. Microchip also provides global technical support, design services, and on-site application engineering support.
