Furthermore, by increasing the maximum allowable overload junction temperature to 175 °C, a significant increase in power density can be achieved.
The 1200V TRENCHSTOP™ IGBT7 is available in several modules: the 1200V EasyPIM™ 1B, three-phase input rectifier PIM (Power Integrated Module) options in 10A and 25A; the 1200V EasyPACK™ 2B six-pack IGBT module; and the 100A six-pack IGBT module. The new modules are designed with the same pinout as the TRENCHSTOP IGBT4 modules, helping design engineers reduce the effort required for their designs. The new modules are also available with higher output current in the same package or similar output current in a smaller package, resulting in more compact inverter designs when needed. All module types are equipped with Infineon's reliable PressFit mounting technology for low ohmic resistance and reduced processing time.
The main advantages of the TRENCHSTOP™ IGBT7 include:
• Low losses: New chip technology exhibits significantly lower losses with optimized low Vce(sat).
• Optimized dv/dt for 2–8k V/µs, ideal for driver applications.
• Short-circuit performance is optimized; 8 µs at 150°C is sufficient for driver applications.
• The gate driver is simpler and optimized for application conditioning. Only one gate resistor is required for control.
• Increased Tvjop up to 175°C, increasing power density.
• Best-in-class VCE(sat).
• Operation at 175°C under overload.
• Improved control optimized for driver applications.
• Higher power density: Same power in a 35% smaller package.
Infineon's 1200V TRUNCHSTOP™ IGBT7 modules and EC7 emitter-controlled diode are available from Farnell in Europe.
