The Vishay Semiconductors VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120 and VS-SF200SA120 incorporate Vishay's latest generation of silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package.
Available in single-switch and low-side chopper configurations, each power module features an integrated SiC MOSFET with a soft-body diode that offers low reverse recovery. This results in lower switching losses and higher efficiency in solar inverters; off-grid electric vehicle (EV) chargers; switched-mode power supplies (SMPS), DC/DC converters, UPS and HVAC systems; large-scale battery storage systems; and telecommunications power supplies.
The compact SOT-227 package of the VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 allows the devices to be used as direct replacements for competing solutions in existing designs, enabling designers to adopt one of the latest SiC technologies without the need to modify the PCB design. Furthermore, the molded package offers electrical isolation of up to 2500 V for one minute, reducing costs by eliminating the need for additional insulation between the component and the heatsink.
The power modules provide a continuous drain current of 50 A to 200 A and a low conduction resistance of up to 12.1 mΩ. The devices are RoHS compliant, offer high-speed switching with low capacitance, and withstand a high maximum junction temperature of +175 °C.
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