D3 Semiconductor's 650V "superjunction" FET power MOSFET offering, now available from Mouser Electronics, is engineered with the company's unique superjunction +FET™ technology, an innovative approach that merges the power and efficiency of superjunction architectures with mixed-signal accuracy. For maximum performance and reliability, each superjunction +FET power MOSFET in D3 Semiconductor's portfolio is targeted at a 650V node, helping to improve power density in applications that traditionally use IGBTs, such as inverters and motor drives.
Superjunction + FET power MOSFETs feature ultra-low RDS-ON (on-state resistance) ranging from 32 milliohms to 1000 milliohms for improved performance in low-frequency applications, as well as fast switching capabilities that allow the devices to operate with rapid gate charge transfers in a short period of time. Each device in the family is also 100% avalanche tested at the highest avalanche current levels in the industry during production to ensure the most robust solution for even the most demanding applications. The devices also meet the JESD 22 standard for electrostatic discharge (ESD) performance and are high-temperature reverse bias (HTRB) tested to over 3,000 hours.
