The compact size of this new SiC rectifier module will help maximize power density, thereby reducing the required board space and overall system cost. Thermal performance is optimized through a combination of Superior Cooling (TSC) and an integrated Negative Temperature Coefficient (NTC) sensor that monitors the device temperature and provides real-time information for device or system forecasting and diagnostics. This rectifier module features a low-inductance package to enable high-frequency operation and has been qualified to operate at junction temperatures up to 175°C.

"This collaboration between Nexperia and KYOCERA AVX combines the most advanced silicon carbide semiconductors with state-of-the-art module packaging and will enable Nexperia to better serve market demand for power electronics products that offer exceptionally high levels of power density," said Katrin Feurle, Senior Director of the SiC Product Group at Nexperia. “The launch of this rectifier module will represent the first step in what is envisioned as a long-term SiC partnership between Nexperia and KYOCERA AVX.”

Thomas Rinschede, Assistant Vice President of the Sensing and Control Division at KYOCERA AVX Components Sensing and Control, commented: “We are delighted to expand our successful collaboration with Nexperia in the production of silicon carbide modules for power electronics applications. Nexperia’s manufacturing expertise combined with KYOCERA’s module know-how makes for an attractive offering for customers seeking to achieve higher power densities using broadband semiconductor technology.”

Nexperia expects samples of the new SiC rectifier modules to be available in the first quarter of 2024.

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