Renesas has developed a new MOSFET wafer manufacturing process (REXFET-1) that allows the new devices to drastically reduce the turn-on resistance (the resistance between the drain and source when the MOSFET is on) by 30%. The lower turn-on resistance contributes to a significant reduction in power loss in customers' designs.
The REXFET-1 process also allows the new MOSFETs to offer a 10 percent reduction in Qg characteristics (the amount of charge required to apply voltage to a gate), and a 40 percent reduction in Qgd (the amount of charge that must be injected into the gate during the Miller plateau phase).

In addition to superior electrical characteristics, Renesas' new RBA300N10EANS and RBA300N10EHPF are available in industry-standard TOLL and TOLG packages, compatible with third-party devices and 50 percent smaller than traditional TO-263 packages. The TOLL package also offers wettable edges for optical inspection.