The MG1500FXF1US71 PMI (IEGT plastic case module) integrates an N-channel IEGT (injection enhanced gate transistor) and a fast recovery SiC diode (FRD) into a package with a surface area of only 140 mm x 190 mm.
Toshiba's new module will save energy, space, and weight, and reduce acoustic noise in high-power switching inverter and motor control designs. Target applications include railway traction, industrial motor control, renewable energy systems, and electricity transmission and distribution.
The use of a SiC Schottky barrier diode (SBD) significantly reduces reverse recovery current—and leads to a corresponding decrease in turn-on loss—compared to silicon alternatives. A combination of the diode and an improved internal package design to reduce parasitic inductances allows the MG1500FXF1US71 to operate with up to 97% lower reverse recovery loss than a module using a conventional silicon diode.
The MG1500FXF1US71 offers a rated insulation voltage of 6000 VAC (rms per minute) and can handle a peak collector turn-off current of 3000 A. Collector power dissipation (at 25°C) is 5000 W. An operating temperature range of -40°C to 150°C is compatible with the extended temperature environments characteristic of target applications.
During the development of the 3300V, 1500A hybrid module, it was incorporated into the design of a railway traction inverter. By using the module, the overall size of the motor control sub-assembly (including the cooling system) was reduced by 40%. Furthermore, the module helped reduce noise and improve ride quality.
