Microchip Technology Inc. has announced the expansion of its SiC portfolio with the introduction of 3.3 kV SiC MOSFETs featuring the lowest on-resistance [RDS(on)] and SiC Schottky Barrier Diodes (SBDs) with the highest current rating on the market, enabling designers to leverage their robustness, reliability, and performance. With this expanded SiC portfolio, Microchip designers have the tools to develop smaller, lighter, and more efficient solutions for electrified transportation, renewable energy, aerospace, and industrial applications.
Many silicon-based designs have reached their limits in terms of maximum efficiency, system cost reduction, and application innovation. While high-voltage SiC is a proven alternative for achieving these results, the availability of 3.3 kV SiC power devices has been limited until now. Microchip's 3.3 kV MOSFETs and SBDs join the company's comprehensive catalog of SiC solutions, consisting of unencapsulated, discrete devices, modules and digital gate drivers for 700V, 1200V and 1700V.
Microchip's 3.3 kV SiC power devices include MOSFETs with an RDS(on) of 25 mOhm, the lowest on the market, and SBDs with a current rating of 90 A, the highest on the market. Both MOSFETs and SBDs are available with or without packaging. These new performance levels allow designers to simplify their designs, create higher-power systems, and use fewer components in parallel for smaller, lighter, and more efficient power solutions.
"We focus on developments that enable our customers to rapidly introduce innovations into their systems and enhance the competitive advantage of their end products more quickly," said Leon Gross, vice president of Microchip's Discrete Products Business Unit. "Our new family of 3.3 kV SiC power products allows customers to easily, quickly, and confidently adopt high-voltage SiC technology, reaping the many advantages of this exciting technology over silicon-based designs."
Microchip has announced the production of hundreds of SiC power devices and solutions over the next three years, ensuring that designers can find the right combination of voltage, current, and package for their application requirements. All of Microchip's SiC MOSFETs and SBDs are designed with customer confidence in mind and offer the highest levels of robustness and reliability on the market. The company's devices adhere to customer-defined obsolescence practices, ensuring that they will continue to be manufactured as long as customers need them and Microchip can produce them.
Customers can combine Microchip's SiC products with other Microchip devices, such as its 8-, 16-, and 32-bit microcontrollers, power management devices, analog sensors, touch and gesture controllers, and wireless connectivity solutions, to create complete systems at a lower total cost of ownership.
Development Tools:
The expanded portfolio of SiC devices is supported by a range of SPICE models for SiC that are compatible with MPLAB® Mindi™ analog simulation modules and Microchip control board reference designs. The Intelligent Configuration Tool (ICT) enables designers to develop efficient SiC gate driver models for Microchip’s AgileSwitch® family of configurable digital gate drivers.
Availability:
Production-ready orders are now being accepted for these unpackaged, discrete 3.3 kV SiC devices, available in a variety of package options.
