especially within industrial equipment and automotive systems. For this launch, the package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter referred to as ATX), an experienced OSAT (outsourced semiconductor assembly and testing) provider.
Improving the efficiency of motors and power supplies, which account for the majority of global electricity consumption, has become a major challenge in achieving a decarbonized society. Since power devices are key to improving efficiency, the adoption of new materials such as SiC (silicon carbide) and GaN (gallium nitride) is expected to further enhance power supply efficiency.
ROHM began mass production of its first-generation 650V GaN HEMTs in April 2023, followed by the release of power stage ICs combining a gate driver and a 650V GaN HEMT in a single package. This time, ROHM has further developed the product by incorporating second-generation elements into a TOLL package and adding it to the existing DFN8080 package to strengthen ROHM's range of 650V GaN HEMT packages, thus responding to market demand for even smaller and more efficient high-power applications.
The new products integrate 2nd generation GaN-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates on-resistance and output load (RDS(on) × Qoss). This contributes to greater miniaturization and energy efficiency in power systems requiring high voltage withstand and high-speed switching.
To reach mass production, ROHM leveraged its proprietary technology and device design expertise, cultivated through a vertically integrated production system, to carry out the design and planning. Under the collaboration announced on December 10, 2024, front-end processes are handled by Taiwan Semiconductor Manufacturing Company Limited (TSMC), while back-end processes are managed by ATX. Furthermore, ROHM plans to partner with ATX to produce automotive-grade GaN devices.
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate further in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships, in addition to advancing its own development efforts.
Liao Hongchang, Advisor and General Manager, ATX SEMICONDUCTOR (WEIHAI) CO., LTD.
“We are extremely pleased to have been entrusted with production by ROHM, an internationally renowned company with advanced manufacturing technologies and its own production facilities, covering everything from wafer fabrication to encapsulation. Technical exchanges with ROHM began in 2017, and we are currently exploring opportunities for deeper collaboration. This partnership has been made possible by ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate with ROHM on the development of automotive-grade GaN devices. By strengthening our partnership, we aim to contribute to energy conservation across various industries and help create a sustainable society.”
Satoshi Fujitani, General Manager, AP Production Site, ROHM Co., Ltd.
“We are delighted to have successfully produced the 650V GaN HEMTs in the TOLL package, achieving sufficient performance. ROHM not only offers standalone GaN devices but also power solutions that combine them with integrated circuits, leveraging ROHM’s expertise in analog technology. The knowledge and philosophy cultivated in the design of these products are also applied to device development. Collaborating with OSAT suppliers like ATX, which possesses exceptionally advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. In the future, we will continue to improve the performance of GaN devices to encourage further miniaturization and efficiency in a wide variety of applications, contributing to enriching people’s lives.”
EcoGaN™
is ROHM's new range of GaN devices that contribute to energy savings and miniaturization by maximizing GaN's properties to achieve lower power consumption in applications, smaller peripheral components, and simpler designs requiring fewer parts.
EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
Product range
Application examples:
Power supply for servers, communication base stations, industrial equipment, and much more.
AC adapters (USB chargers), photovoltaic inverters, SAE (energy storage systems).
They can be installed in a wide range of power supply systems with output power from 500 W to 1 kW.
