International Rectifier has introduced the AUIRS2332J 600V three-phase gate driver IC for driving high voltage motors in automotive electric vehicle (EV) and hybrid electric vehicle (HEV) applications.
The AUIRS2332J driver for high-power, high-speed power MOSFETs and IGBTs incorporates three independent output channels with high- and low-potential references. The company's proprietary HVIC technology enables a robust monolithic construction with logic inputs compatible with CMOS or LSTTL outputs and even 3.3V logic. The new device also features an integrated ground-referenced operational amplifier to provide analog bridge current feedback via an external resistor for current sensing, a current-off function, and an open-drain FAULT signal to indicate overcurrent or undervoltage shutdown. The IC is supplied in a PLCC44 package, which offers increased creep distances between the high-voltage pins, thus simplifying PCB layout.
With its high level of integration and powerful set of protection functions, the AUIRS2332J simplifies and miniaturizes the design, while providing the reliability and robustness needed for motor or inverter control applications in EVs and VEHs.
The AUIRS2332J is fully designed to withstand negative transients at the switching node that may occur during normal operation and protection mode, thus increasing system robustness. The device's output drivers incorporate a high-current pulse intermediate stage designed to minimize driver cross-conduction. Propagation delays are balanced to simplify its use at high frequencies. The floating channel can be used to drive the N-channel power MOSFET or IGBT in a high-potential-side configuration.
IR's automotive-approved ICs undergo dynamic and static device averaging testing, as well as 100% automated wafer visual inspection, as part of IR's Automotive Quality Initiative, which aims for zero defects. The devices are certified to AEC-Q100 standards and their materials list is environmentally friendly, lead-free, and RoHS compliant.
AUIR2332J specifications:
Voffset: 600 V.
Vout: 10-20 V.
Io: +250 mA/ -500 mA.
Ton/Toff: 540 ns.
Encapsulation: PLCC44.
