Available in TOLT, TO-247, and TOLL package options, the devices offer engineers the flexibility to customize thermal management and board design for specific power architectures.
The new TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven, normally-off depletion-mode (d-mode) architecture pioneered by Transphorm, which was acquired by Renesas in June 2024.
Based on low-loss mode technology, these devices offer superior efficiency compared to silicon, silicon carbide (SiC), and other GaN offerings. They also minimize power loss with lower gate loading, output capacitance, crossover loss, and dynamic resistance impact, while achieving a higher threshold voltage of 4 V—a feat not attainable with current enhancement-mode (e-mode) GaN devices.
Manufactured on a chip 14% smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-state resistance by 14% and delivering a 20% improvement in the on-state resistance and output capacitance ratio (FOM). The smaller chip size reduces system costs and lowers output capacitance, resulting in increased efficiency and power density. These advantages make Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency, and small footprint are critical. They are fully compatible with existing designs for easy upgrades while preserving existing engineering investments.
Available in compact TOLT, TO-247, and TOLL packages, these devices offer one of the broadest package options to suit the thermal performance and design optimization needs of power systems ranging from 1 kW to 10 kW, and even higher with parallel connections. The new surface-mount packages include thermal conduction paths on the bottom (TOLL) and top (TOLT) to reduce case temperature, facilitating paralleling of devices when higher conduction currents are required. Additionally, the widely used TO-247 package provides customers with greater thermal capacity for higher power handling.
“The launch of the GaN Gen IV Plus devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of Renesas’ GaN Business Division. “Future versions will combine field-proven SuperGaN technology with our controllers and drivers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, smaller size, and greater efficiency at a lower total system cost.”.
Like previous d-mode GaN products, Renesas' new devices utilize an integrated low-voltage silicon MOSFET, a unique configuration that enables normally-off, non-interruptible operation while fully leveraging the low-loss, high-efficiency switching advantages of high-voltage GaN. By using silicon FETs for the input stage, SuperGaN FETs are easily controlled with off-the-shelf, standard gate drivers, rather than the specialized drivers typically required for e-mode GaN. This compatibility simplifies design and lowers the barriers to GaN adoption for system developers.
GaN-based switching devices are rapidly growing as key technologies for next-generation power semiconductors, driven by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC- and silicon-based semiconductor switching devices, they offer superior efficiency, higher switching frequencies, and smaller footprints.
Availability
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are now available, along with the 4.2 kW GaN PFC Totem-pole evaluation platform (RTDTTP4200W066A-KIT).
