The IMS evaluation platform demonstrates a cost-effective way to improve heat transfer, increase power density, and reduce system cost for power systems in automotive, consumer, industrial, and server or data center applications.
The GaN Systems GSP65RxxHB-EVB IMS-based evaluation platform, available from Mouser Electronics, consists of the GSP65MB-EVB baseboard and two IMS evaluation modules, each featuring a cooled, high-power electron mobility transistor (E-HEMT) on the GaN Systems GS66516B base. The 650V IMS evaluation modules are configured as a half-bridge and are available in 13 milliohm, 2-4 kW, and 25 milliohm, 4-7 kW variants. Together, the baseboard and IMS evaluation modules allow for 10 different configurations, with two additional configurations when using a second baseboard. Designers can also use the IMS evaluation modules independently as a high-power gallium nitride (GAN) intelligent power module (IPM) with their own boards for in-system prototyping.
The evaluation modules offer very low inductance and feature an optimized control board that minimizes both power and gate circuitry. Typical applications include onboard chargers, DC/DC converters and three-phase inverters for electric and hybrid vehicles, photovoltaic inverters and industrial motor controllers, switched-mode power supplies for servers/data centers, and residential energy storage systems.
