The SCH2080KE is the first SiC power module to successfully integrate a SiC SBD into a single package. The forward voltage (VF) is reduced by 70% or more for lower power loss and fewer components.
The SiIGBTs commonly used in 1200 V inverters and converters cause switching power loss due to tail current or recovery from the external FRD, thus requiring a SiC power module capable of operating with low switching loss at high frequencies. However, conventional SiC power modules were plagued with reliability issues, including characteristic degradation due to diode body conduction (e.g., increased ON resistance, forward voltage, and resistance degradation) and gate oxide film failures, making full-scale integration impossible.
ROHM has succeeded in overcoming these problems by improving processes related to defects in the crystal and device structure and reducing ON resistance per unit area by approximately 30% compared to conventional products, resulting in increased miniaturization.
ROHM has also succeeded in integrating a SiC SBD (which previously had to be mounted externally) into the same package using its patented mounting technology, minimizing the forward voltage that was problematic in previous SiC power module diode bodies. As a result, the SCH2080KE reduces operating power loss by 70% or more compared to the Si IGBTs used in common converters. This not only provides lower switching losses but also enables compatibility with smaller peripheral components by supporting frequencies above 50 kHz.
ROHM also offers the SCT2080KE, a SiC power module without an internal SiC SBD. Both the SCH20801KE and the SCT2080KE can be configured to meet customer requirements.
