In response to this situation, ROHM has further refined its Nano Pulse Control™ ultra-high-speed pulse control technology. Originally developed for power ICs, this technology significantly improved the control pulse width from the conventional 9 ns to an industry-leading 2 ns*. Leveraging this technology has enabled ROHM to create its own ultra-high-speed control IC technology that maximizes the performance of GaN devices.
When the goal is to miniaturize the power supply circuit, it is necessary to reduce the size of peripheral components through high-speed switching. To achieve this, a control integrated circuit is needed that can leverage the driving power of high-speed switching devices, such as GaN devices.
To propose solutions that include peripheral components, ROHM has created a very high-speed control integrated circuit technology optimized for GaN devices using the patented Nano Pulse Control™ analog power supply technology.
ROHM is currently working to commercialize integrated control circuits using this technology, and plans include starting shipments of samples of the 100V, 1-channel DC-DC control IC in the second half of 2023. Its combined use with ROHM's GaN devices (EcoGaN™ series) is expected to result in significant energy savings and miniaturization in various applications, such as base stations, data centers, FA (factory automation) equipment, and drones.
In the future, ROHM will continue to develop products that help solve social problems by seeking greater ease of use in applications focused on its extensive knowledge of analog technology.
Professor Yusuke Mori, Graduate School of Engineering, Osaka University
: “GaN has been the subject of much anticipation for many years as a power semiconductor material capable of achieving energy savings. However, it also presents some obstacles such as quality and cost. In these circumstances, ROHM has created a mass production system for GaN devices that offers greater reliability, while simultaneously developing control integrated circuits capable of maximizing their performance. This represents a major step towards the wider adoption of GaN devices. To truly demonstrate the performance of power semiconductors, it is necessary to organically link each technology, such as wafers, devices, control integrated circuits, and modules. In this field, Japan is home to the headquarters of many leading companies, including ROHM. I hope to contribute to achieving a decarbonized society by collaborating with our GaN-on-GaN wafer technology and ROHM devices, as well as control integrated circuits and modules.”
integrated control circuit technology
incorporates Nano Pulse Control™. This technology was created by combining expertise in advanced analog design, encompassing circuit design, processes, and layout, using ROHM's vertically integrated production system.
This significantly reduces the minimum control pulse width of the control integrated circuit from the conventional 9 ns to 2 ns using a single circuit configuration, enabling a reduction from high voltages up to 60 V to low voltages down to 0.6 V with a single power supply integrated circuit in 24 V and 48 V applications.
Furthermore, compatibility with smaller drive peripheral components for high-frequency switching of GaN devices reduces the mounting area by approximately 86% compared to conventional solutions when combined with an EcoGaN™ power supply circuit.
Nano Pulse Control™
ROHM's very high-speed pulse control technology achieves a turn-on time (power IC control width) on the order of nanoseconds (ns), making it possible to convert high to low voltages using a single IC, unlike conventional solutions that require 2 or more power ICs.
EcoGaN™
is ROHM's new range of GaN devices that contribute to energy savings and miniaturization by maximizing GaN's low conduction resistance and high-speed switching characteristics to achieve lower power consumption in applications, smaller peripheral components, and simpler designs requiring fewer parts.
*EcoGaN™ and Nano Pulse Control™ are trademarks or registered trademarks of ROHM Co., Ltd.
*ROHM Study, March 21, 2023
Professor Yusuke Mori
After his time as an associate professor at the Graduate School of Engineering at Osaka University, he became a full professor (in the same department) in 2007. There he devoted himself for many years to research and development of GaN crystal growth, while creating the technology for mass crystal production.
Currently, to promote the widespread adoption of GaN devices, he is working on improving the quality of GaN-on-GaN wafer technology, which is necessary for forming GaN transistors on GaN substrates. A leader in applied GaN technology research, he also participates in industry-academia collaborations with numerous companies.
In 2008 he received the Science and Technology Mention from the Ministry of Education, Culture, Sport, Science and Technology, and recently received the 2022 National Invention Mention "Incentive Award for Future Creation Invention", as well as the 13th "Achievement Award in Composite Semiconductor Electronics" (Isamu Akasaki Award).
