The switching losses of Power Integrations' patented 1250V PowiGaN technology are less than one-third of those observed in equivalent silicon devices at the same voltage. The result is a power conversion efficiency of up to 93%, enabling very compact flyback power supplies that can deliver up to 85W without a heatsink.
In the words of Radu Barsan, Vice President of Technology at Power Integrations: “Power Integrations continues to advance the development and commercial deployment of high-voltage GaN technology, rendering even the best high-voltage silicon MOSFETs obsolete. We were the first to commercialize high-volume orders for GaN-based power supply ICs in 2019, and earlier this year we introduced a 900-volt version of our GaN-based InnoSwitch products. Our continued development of higher-voltage GaN technology, illustrated here by our new 1250 V devices, extends the efficiency benefits of GaN to an even broader range of applications, including many currently served by silicon carbide technology.”
Designers using the new InnoSwitch3-EP 1250 V ICs can confidently specify a peak operating voltage of 1000 V, enabling an 80 percent reduction from the industry-standard absolute maximum voltage of 1250 V. This provides significant leeway for industrial applications and is especially valuable in harsh power grid environments, where robustness is an essential defense against grid instability, surges, and other power disturbances.
Availability and Resources
: Samples are available now; the lead time for the 1250 V InnoSwitch3-EP integrated circuits is 16 weeks. Pricing for the 1250 V InnoSwitch3-EP devices in the INSOP-24D package starts at $3 per 10,000 units. A reference design, DER-1025, describing a 12 V, 6 A flyback converter,
