The new package offers a half-bridge solution in a single device, occupying 30% less PCB area compared to dual MOSFETs for three-phase motor control topologies by eliminating PCB traces, while also enabling easy automated optical inspection (AOI) during production. The LFPAK56D half-bridge utilizes the existing high-volume assembly processes of the LFPAK56D, which has proven reliability in the automotive industry. The package design uses flexible wires to improve overall reliability, and an internal copper clip connection between the MOSFETs simplifies PCB layouts and provides a plug-and-play solution with an exceptional 98 A current handling capacity.
Typically, in a half-bridge arrangement, the PCB connection between the Hs (high-side) MOSFET source and the Ls (low-side) MOSFET drain can create a significant amount of parasitic inductance. However, with its internal clip connection, the LFPAK56D half-bridge package achieves 60% lower inductance.
The newly released LFPAK56D half-bridge MOSFETs are the BUK7V4R2-40H and the BUK9V13-40H. Both utilize the robust automotive-grade Trench 9 silicon process technology, are rated at 40V, and are verified to twice the automotive AEC-Q101 specification in key tests. The RDS(on) of the devices measures 4.2 mΩ (BUK7V4R2) and 13 mΩ (BUK9V13).
The AEC-Q101-rated Nexperia LFPAK56D half-bridge package is suitable for a wide range of three-phase automotive applications, including water and fuel pumps, motor control, and DC/DC power conversion. It occupies 30% less PCB area and has 60% less parasitic inductance for high-performance switching applications. This new technology has already proven successful with the design and commitment of leading automotive customers.

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