The devices are manufactured using a 180 nm CMOS process that employs proprietary radiation-boosting techniques, enabling high single-event effects (SEE) resilience and a total ionizing dose (TID) of up to 30 krad (Si). These characteristics make them ideal for small satellites and LEO constellations requiring high performance, a small form factor, and radiation resilience at a lower cost, as well as other applications where radiation resilience is critical, such as medical imaging. The AP54RHC288 radiation-boosted dual-input arbiters protect critical applications by ensuring that only one output is high on each channel, regardless of the signal status at the inputs.
The AP54RHC86 radiation-hardened, 2-input quad XOR gates feature built-in triple redundancy for increased reliability and logic-level downconversion to VCC. The AP54RHC04 radiation-hardened hexagonal inverter, available upon request, features a patented cold-saving capability with zero static power penalty and built-in triple redundancy for increased reliability. The AP54RHC164 radiation-hardened, parallel-in, serial-out (SIPO) shift registers include a patented output stage that enables cold-saving configurations by preventing leakage current penalties on the inputs and outputs while they are off. These devices are also suitable for aerospace, power, and other harsh environment applications.
