Target applications include EPS, DC-DC converters, and load switches.
Each device features a chip using the U-MOSVIII-H process in a TO-220SM(W) package with its package resistance reduced to the limit by a new internal copper connector. This results in industry-leading on-resistance measured at VGS ( on
= 10V. RDS(on) = 0.78mΩ (typical) for the TK200F04N1L and RDS ( typical) for the TK160F10N1.
) = 2.0mΩ
Both devices boast a low thermal resistance of Rth ( ch-c) = 0.4°C/W (max) and a maximum channel temperature ratio of 175°C.
These new MOSFETs offer the highest efficiency and lowest heat generation. Furthermore, the U-MOSVIII-H has improved switching ripple suppression capabilities compared to the previous generation. This can contribute to EMI noise reduction in applications.
The TK160F10N1 and TK200F04N1L will meet the AEC-Q101 automotive qualification requirements.
- Details
- Category: Integrated Circuits
N-channel MOSFET for automotive applications, with low resistance in TO-220SM (W) package
Toshiba Electronics Europe (ETE) has expanded its automotive N-channel power MOSFET range with the launch of two new devices: the TK160F10N1 100V 160A and the TK200F04N1L 40V 200A.
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