Toshiba Electronics Europe has announced a new high-gate driver for N-channel power MOSFETs that can be controlled by a 3.3V logic input.It features short-circuit protection, diagnostic functions, and a reverse current prevention function to prevent reverse current flow in the event of battery reverse polarity. The TPD7104AF is designed for automotive applications such as power on/off switches in start/stop systems, semiconductor relays in electronic control units (ECUs), and junction boxes in 12V battery systems.
By combining a TPD7104AF gate driver and an N-channel power MOSFET, a semiconductor relay can be easily created thanks to its integrated charge pump. Adding a shunt resistor enables short-circuit protection and diagnostic functions.
The TPD7104AF has a very low output current leakage for the battery reverse bias condition: IRev = -1μA (min) (@ Tj = 25 ° C) [1] Housed in a compact PS-8 package the device measures only 2.8 mm x 2.9 mm.
[1] Pin No.4 is open and VDD = -5 to -18V.
