Furthermore, the new devices also offer improved performance in both Avalanche and Linear modes, resulting in greater robustness and reliability.
Neil Massey, Product Marketing Manager at Nexperia, comments: “The new 8 x 8 mm LFPAK88 MOSFETs combine the latest high-performance superjunction silicon technology with our proven LFPAK copper clip technology, which is known for delivering significant electrical and thermal performance advantages. The resulting low RDS allows us to pack more silicon into the package, improving power density and reducing the device footprint.”
Measuring just 8 x 8 x 1.7 mm, the new power MOSFETs also feature class-leading Linear mode/Safe Operating Area (SOA) characteristics for safe and reliable switching under high-current conditions. The SOA under operating conditions of 1 ms and 20 VDS is 35 A due to the combination of silicon and package, while at 10 ms and 20 VDS, where the package dominates, the SOA is 17 A. These figures are 1.5 to 2 times better than those of the competition. The devices also offer the best Single Pulse Avalanche (EAS) rating of 2.3 J and a very strong ID current rating of 500 A, which—unlike some competing devices—is a measured, not theoretical, limit.
The size and performance advantages offered by Nexperia's 8 x 8 mm LFPAK88 MOSFETs allow designers to replace two older components in parallel with a single LFPAK88, simplifying manufacturing and increasing reliability. The AEC-Q101 rated BUK7S0R5-40H components, offering more than twice the reliability of the automotive standard, are suitable for braking, power steering, reverse battery protection, electronic fuses, DC-DC converters, and motor control applications. The PSMNR55-40SSH industrial MOSFETs are suitable for battery isolation, current limiting, electronic fuses, motor control, synchronous rectification, and load switching applications in power tools, household appliances, fans, and electric bicycles, scooters, and wheelchairs.

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