The new technical report details the performance advantages of Power Integrations' industry-leading 1250V PowiGaN HEMTs, showcasing their proven field reliability and ability to meet the power density and efficiency (>98%) requirements of the 800VDC architecture. Furthermore, the document demonstrates that a single 1250V PowiGaN switch offers higher power density and efficiency compared to competing 650V stacked GaN FETs and 1200V SiC devices.
The technical report also highlights Power Integrations' InnoMux™2-EP integrated circuits as a unique solution for auxiliary power supplies in 800 VDC data centers. The 1700 V PowiGaN switch integrated into the InnoMux-2 device supports an input voltage of 1000 VDC, while its SR ZVS operation provides over 90.3% efficiency of the 12 V system in a liquid-cooled, fanless 800 VDC architecture.
“With the increasing power demands of AI, moving to an 800 VDC input simplifies rack design, makes more efficient use of space, and reduces copper usage,” says Roland Saint-Pierre, vice president of product development at Power Integrations. “With the increasing power demands of racks, we believe that 1250 V and 1700 V PowiGaN devices are the ideal choice for primary and auxiliary power supplies, as they offer the efficiency, reliability, and power density required in 800 VDC data centers.”.
Power Integrations, the only supplier of 1250V and 1700V high-voltage GaN switches in mass production, introduced its first GaN integrated circuits in 2018 and currently has more than 175 million GaN switches in use in end products ranging from fast chargers to data centers and electric vehicles.
