Manufactured in Qorvo's 0.25µm gallium nitride on silicon carbide (GaN-on-SiC) production process, this monolithic microwave integrated circuit (MIMC) power amplifier simplifies system integration and delivers impressive performance in a compact 15.24 × 15.24 mm screw-on package.
The Qorvo QPA2308 power amplifier, available from Mouser Electronics, features over 60 W of saturated output power and over 21 dB of large-signal gain. The device's power aggregate efficiency (PAE) is rated above 47 percent, and the RF output power where the device begins to draw positive gate current (PSAT) is measured at 48 dBm. The input return loss for the amplifier is specified at 14 to 23 dB, while the output return loss is 13 dB. To simplify system integration, the QPA2308 also provides two fully matched 50-ohm RF ports, each integrated with DC blocking capacitors.
The Qorvo QPA2308 has an operating temperature range of -40 to 85 degrees Celsius and a power dissipation of 140 W (at 85 degrees Celsius). This RoHS-compliant amplifier is ideal for RF applications such as C-band radar, satellite (Satcom) and space communications, and electronic warfare technologies.
Mouser is also stocking the QPA2308EVB1 evaluation board. Made from Rogers RO6035HTC dielectric, a high-reliability material used specifically in aerospace and defense projects because of its dielectric constant and low loss, the PCB on the evaluation board features 0.5 oz copper and is 0.5 oz thick on both sides.
