replacing conventional back-to-back FET switches with a single low-loss, fast-switching, and easy-to-control device.
Single-stage topology: greater efficiency and fewer components.
Current power conversion designs use unidirectional silicon or silicon carbide (SiC) switches, which only block current in one direction when off. This necessitates splitting the conversion into multiple stages with multiple switching circuits.
For example, a typical solar microinverter employs a full bridge of four switches to convert from DC to DC, followed by a second stage to generate the AC output. Even in modern single-stage designs, switches are required in a back-to-back configuration, quadrupling the number of devices and reducing efficiency.
Bidirectional GaN technology changes this paradigm. By integrating bidirectional switching into a single device, conversion can be performed in a single stage with fewer switches. In a typical solar microinverter, just two Renesas bidirectional SuperGaN® devices are sufficient, eliminating intermediate capacitors and halving the number of switches.
Furthermore, GaN enables fast switching and low stored charge, allowing for higher frequencies and greater power density. In real-world applications, this architecture has demonstrated efficiencies exceeding 97.5%.
High performance and compatibility with silicon drivers.
Renesas' 650V SuperGaN devices are based on a proprietary, robust, and easy-to-control normally-off technology. The TP65B110HRU combines a high-voltage bidirectional GaN chip with two low-voltage silicon MOSFETs, offering:
High threshold voltage (3V)
Wide gate margin (±20V)
Internal diodes for efficient reverse conduction.
Unlike other GaN (enhancement mode) solutions, this device is compatible with standard drivers without requiring negative bias, simplifying design and reducing costs.
It also offers high dv/dt immunity (>100 V/ns), fast and stable switching, and excellent performance in both soft and hard switching. This makes it ideal for demanding topologies such as Vienna-type rectifiers.
According to Rohan Samsi, vice president of Renesas' GaN division, this innovation allows customers to achieve greater efficiency, reduce components, minimize PCB size, and decrease system costs.
Key features of the TP65B110HRU:
±650V continuous rated (AC and DC),
±800V transient
, 2kV ESD protection,
110 mΩ typical (RSS, ON),
3V gate threshold,
no negative voltage required,
±20V maximum Vgs,
100 V/ns dv/dt
, low free-running voltage drop (1.8V),
TOLT package with superior heat dissipation
Availability:
The TP65B110HRU is now available for production. Customers can also purchase the RTDACHB0000RS-MS-1 evaluation kit for testing with various control and soft-switching (ZVS) configurations.
