Like the previous generation of devices, the new 650V ICeGaN H2 transistors are driven similarly to silicon MOSFETs, eliminating the need for complex and inefficient circuitry by using commercially available gate drivers instead. Finally, the ICeGaN H2 HEMTs feature a QG 10 times lower than silicon parts and a QOSS 5 times lower, allowing them to dramatically reduce switching losses at high switching frequencies while decreasing size and weight. The result is class-leading efficiency, 2% higher than the best silicon MOSFETs in the industry for SMPS applications.
GIORGIA LONGOBARDI | CEO & CO-FOUNDER, CGD: "CGD has established an innovative leadership position with the H2 series of ICeGaN. Independent research from Virginia Tech has shown that ICeGaNs are the most robust GaN devices in the industry and, in terms of ease of use, can be controlled like a standard silicon MOSFET, thus eliminating the learning curve that can slow market adoption. The efficiency of GaN is well known, and ICeGaN is impressive across the entire load range."
The ICeGaN H2 series incorporates an innovative NL3 (no-load and light-load) circuit integrated on-chip with the GaN switch, resulting in record-low power losses. An advanced, integrated Miller clamping structure, also on-chip, eliminates the need for negative gate voltages, achieving true zero-volt turn-off and improving dynamic RDS(ON) performance. These single-chip e-mode (normally off) GaN HEMTs include a monolithically integrated interface and protection circuit for unmatched gate reliability and design simplicity. Finally, a current-sensing feature reduces power dissipation and allows direct grounding to optimize cooling and EMI.
GIORGIA LONGOBARDI | CEO AND CO-FOUNDER, CGD: "CGD has overcome all the challenges that typically slow down the adoption of a new technology. Furthermore, we are now ready to serve the mass market with our H2 series ICeGaN transistors, which are available through an established supply chain."
