ROHM Semiconductor offers a wide range of SiC MOSFETs for all these applications. But choosing the right SiC MOSFET isn't enough: you also need to use the appropriate gate driver IC. The BM61S40RFV-C and BM61S41RFV-C, for example, provide an isolation voltage of 3750 Vrms, an I/O delay time of 65 ns, and a minimum input pulse width of 60 ns. With built-in protection features such as Miller Clamp and Undervoltage Lockout (UVLO), these ICs are suitable for driving all ROHM SiC MOSFETs. Alternatively, the gate driver ICs can also be used to drive traditional Si MOSFETs and Si IGBTs.
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- Category: Integrated Circuits
SiC MOSFET: Gate driver ICs for industrial and automotive applications
WBG semiconductors are no longer a thing of the future: SiC MOSFETs, for example, promise advantages in versatile applications, from on-board chargers and DC/DC converters in automotive applications to industrial applications such as photovoltaic systems, uninterruptible power supply systems, etc.
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