ROHM is currently mass-producing the first trench-type SiC MOSFETs on the market. ROHM's new generation of SiC MOSFETs reduces on-resistance by 50% across the entire temperature range and input capacitance by 35% for a chip of the same size compared to flat-gate SiC MOSFETs. Their optimal performance is achieved by combining low losses with high-speed switching. This reduces the size of peripheral components such as inductors and capacitors thanks to the higher switching frequency. As a result, conversion efficiency is improved, which contributes to miniaturization, weight reduction, and increased energy efficiency. The new 1200V SCT3080KL series SiC MOSFETs in a TO-247 package are a perfect example.
ROHM will also offer AECQ-approved SiC MOSFETs based on the 2nd generation planar series.
Third-Generation SiC Schottky Diodes:
The third generation of SiC Schottky diodes achieves the lowest forward voltage (VF) and reverse leakage current (lR) across the entire temperature range of all currently available SiC Schottky diodes. They are also characterized by their ability to handle high overcurrents, making them ideal for power supply applications. Alongside the recently announced 650V/6, 8, and 10A TO220AC devices, ROHM will add D2PAK and TO220FM devices, which also provide lower current options of 2A and 4A to this family.
SiC diodes offer extremely short reverse recovery time compared to silicon-based devices, making them ideal for high-speed switching.
Overall, these characteristics contribute to the ongoing trend of increased efficiency, power density, and robustness in designs.
SiC
modules, including chopper modules for converters, integrate trench-type SiC MOSFETs and mass-produced SiC Schottky diodes. In addition to 2-in-1 modules, 1200V/120A, 180A, and 300A chopper modules are available to meet market demands. ROHM is also working on a new power module with lower parasitic inductance.
