This MOSFET gate driver is designed for configuring a power multiplexer or load switching circuit that incorporates reverse current blocking along with a back-to-back connection of external N-channel MOSFETs.
The TCK421G features a charge pump circuit that supports a wide input voltage (VIN) range of 2.7 to 28.0V and provides a stable 10V supply to the gate-source voltage of external MOSFETs, thus facilitating high-current switching. The typical quiescent input current when ON (IQ(ON)) has a minimum value of 140mA, while the standby current when OFF (IQ(OFF)) is only 0.5mA. Furthermore, the TCK421G includes overvoltage and undervoltage protection. The gate control voltage can be selected to suit the application.
The device, supplied in a WCSP6G package, occupies a surface area of just 1.2 mm x 0.8 mm and is 0.35 mm high. This is one of the smallest packages in the industry, enabling the use of high-density devices such as wearables and smartphones.
The TCK421G is the first product announced in a series that will consist of six devices. Due to its high efficiency and small size, the new driver can be used in a wide variety of applications, including battery-powered, consumer, and industrial equipment.
- Details
- Category: Integrated Circuits
Compact MOSFET gate driver
Toshiba Electronics Europe GmbH introduces the new TCK421G MOSFET gate driver integrated circuit, which controls the gate voltage of external N-channel MOSFETs based on the input voltage.
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