The R-series of high-power IGBTs has been developed to meet the requirements of applications demanding high reliability in cold geographical areas, and to increase inverter output power without increasing its size.
Thanks to their chip-LPT architecture, the 4.5 kV and 6.5 kV high-power IGBT modules ensure low power dissipation and a large RBSOA (Reverse Bias Safe Operating Area). With a blocking voltage of up to 6.5 kV, the R-series high-power IGBT modules are among the most powerful modules currently available on the market.
The R-series chip technology offers, among others, the following advantages:
- IGBT chip: reduced losses, controllability of di/dt and dv/dt.
- Diode chip: reduction of reverse recovery current Irr.
- Increased SOA robustness (SOA: Safe Operating Area), positive temperature coefficient (PTC), to enable easy parallel connection.
The current density of the new IGBT chip is 94% of that of a conventional IGBT, while the current density of the diode chip remains unchanged. At nominal current and 125 °C, the new IGBT operates at a collector-emitter saturation voltage VCE(sat) 30% lower than conventional IGBTs. Furthermore, the peak collector current (i.e., the diode's Irr) is reduced by 20%, and consequently, the IGBT's turn-on energy Eon is reduced by 10%.
In summary, the new IGBT improves the VCE(sat)/Eoff trade-off by 25% without compromising robustness. The new diode also improves Eon by reducing Irr, while the soft reverse recovery behavior ensures the robustness properties of conventional diode designs are maintained. Furthermore, the maximum operating temperature is increased from 125°C to 150°C, while the minimum storage temperature rises from -40°C to -55°C. Despite the increased operating temperature, the new modules achieve the same lifespan as conventional H-series modules, even with the same temperature fluctuations on the module's backplate. Unlike conventional 4.5 and 6.5 kV high-power IGBT modules, the new wire bonding technology also improves power cycling capacity.
Mitsubishi Electric offers the R-series high-power IGBT modules in a 1200 A/4.5 kV single configuration in a standard package (insulation voltage Vaisl = 6 kV), as well as 800 A/4.5 kV and 1200 A/4.5 kV versions in a high-insulation package (insulation voltage Vaisl = 10.2 kV). A dual module with a corresponding freewheeling diode and a high-insulation package is also available. The 750 A/6.5 kV single module of the 6.5 kV R-series has already moved from the development phase to series production.
Mitsubishi Electric has achieved a milestone in the field of high-voltage modules by obtaining IRIS (International Railway Industry Standard) certification. This certification was awarded to Mitsubishi Electric, the first Japanese company to receive it, in March 2009. The research, production, and testing facilities for semiconductor components at Mitsubishi Electric Corporation's power device factories in Fukuoka and Kumamoto, as well as at the Sun-A factory in Nijo, were successfully audited. This confirms that Mitsubishi Electric provides high-quality, certified products and services to the railway industry. IRIS is a quality standard established by the European Railway Industry Association (UNIFE) for railway suppliers, covering the following areas: project management (from conception and development to after-sales service, tender management, and change management), reliability and maintenance, and product safety.
Author: Dr. Prasad Bhalerao, Product Marketing Specialist for High Power IGBT Modules at Mitsubishi Electric's European Semiconductor Division.
