The device offers a typical power gain of 18dB at 2675MHz with an efficiency of 54.1%. The A3G26D055N also features high terminal impedances and a highly linearized error vector magnitude (EVM), making it an optimal choice for massive MIMO active antenna systems for 5G base stations. Applications for the NXP A3G26D055N transistor include 5G massive MIMO, W-CDMA and LTE, macrocell base stations and controllers, small cell final stage, active antennas, and general-purpose telecommunications.
- Details
- Category: Integrated Circuits
NXP A3G26D055N Airfast® RF power transistor (GaN)
Mouser distributes the NXPA3G26D055N transistor, designed for mobile database station applications requiring very high instantaneous bandwidth. This symmetrical 8W Doherty RF transistor offers a wide frequency range, from 100 to 2690 MHz.
Print Magazine
Annual subscription price:
You will receive all 10 editions that are published each year.
social networks
Popular News Electronics
Spanish electronics magazine. Printed for over 25 years.
Spain - Madrid - All rights reserved © Convertronic Professional Spanish Electronics Magazine.