These features make the devices ideal for motor control, power supplies, renewable energy systems, and other high-power applications. The range also includes application-specific MOSFETs (ASFETs) designed for hot-swapping functions in AI servers. With top and bottom cooling options, these CCPAK MOSFETs provide high power density and reliable solutions. All devices are supported by JEDEC registration and Nexperia interactive datasheets for seamless integration.
The reference PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of driving 460 A and dissipating 1.55 kW of power, but in a CCPAK1212 package that occupies only 12 mm x 12 mm of board space. The PSMN1R0-100CSF offers similar specifications in a top-cooled version.
The secret to this impressive performance lies in the internal construction of the devices. The "CC" in CCPAK1212 stands for copper clip, meaning that the power MOSFET's silicon chip is sandwiched between two copper pieces: the drain tab on one side and the source clip on the other. By completely eliminating wire splices, this streamlined assembly offers low connection resistance, reduced parasitic inductances, high peak currents, and excellent thermal performance.
The NextPower CCPAK1212 80/100 V MOSFETs are recommended for high-power industrial applications where high efficiency and reliability are critical, such as brushless DC (BLDC) motor control, switched-mode power supplies (SMPS), battery management systems (BMS), and renewable energy storage. The availability of these power-capable MOSFETs in a single package reduces the need for paralleling, simplifying designs and offering more compact and cost-effective solutions.
The Nexperia CCPAK1212 announcement also includes several new application-specific MOSFETs (ASFETs) targeted at hot-swapping in increasingly powerful AI servers. These devices feature an enhanced safe operating area (SOA), providing superior thermal stability during linear mode transitions.
In all these applications, the availability of top and bottom cooling options gives engineers a selection of heat extraction techniques, especially useful when dissipating heat through the printed circuit board is impractical due to the sensitivity of other components.
“Despite offering market-leading performance, we know some customers may be hesitant to design a relatively new package,” said Chris Boyce, General Manager of Nexperia’s Product Group. “For this reason, we registered the CCPAK1212 with the JEDEC standards organization (reference MO-359). We took a similar approach when we introduced the first LFPAK MOSFET package a few years ago, and as a result, there are now many compatible devices available on the market. You’re never alone for long when innovations deliver real value to customers,” Boyce concluded.
All new CCPAK1212 MOSFET devices are supported by a range of advanced design tools, including thermally compensated simulation models. Traditional PDF datasheets are complemented by Nexperia's user-friendly, interactive datasheets, which now incorporate a new graph-to-CSV function that allows engineers to download, analyze, and interpret the data behind each device's key characteristics. This not only streamlines the design process but also increases confidence in design decisions.
Nexperia plans to extend the CCPAK1212 package to power MOSFETs across all voltage ranges and also to its automotive-qualified AEC-Q101 product portfolios, thus responding to the changing demands of next-generation systems with the most demanding current and thermal performance requirements.
