The first high-voltage product on this new platform is the AOS AOTL037V60DE2 600V MOSFET, designed to meet the growing demand for high efficiency and high power density in a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor controllers, and industrial power systems.
The design challenges of medium- to high-power switched-mode power supplies (SMPS) and solar inverter systems can be summarized in four key requirements: higher efficiency, higher power density, lower total system cost, and uncompromising robustness. To meet these expectations, high-voltage superjunction MOSFETs have become the preferred devices for critical topologies, including the slow leg of totem-pole power supplies (PFCs), resonant LLC converters, power factor correction bundles (PFCBs), and cycloconverters.
AOS developed its advanced αMOS E2™ High-Voltage Super Junction MOSFET platform with an intrinsically robust body diode, capable of reliably handling harsh switching scenarios, such as the reverse recovery of the free-body diode that can occur during anomalous events like short circuits or startup transients. The AOTL037V60DE2, available in a TOLL package, features a maximum RDS(ON) of 37 milliohms. In evaluations conducted by the AOS application engineering team, the robustness of the body diode in this αMOS E2™ MOSFET demonstrated the ability to withstand di/dt = 1300 A/µs under specific forward current (IF) conditions at a junction temperature of 150 °C. Furthermore, AOS testing confirmed that the AOTL037V60DE2 offered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Hold Time (SCWT) compared to competing MOSFETs. This enhanced robustness translates into greater system-level reliability, ensuring solid performance even under abnormal operating conditions.
“We designed this platform and the first high-voltage MOSFET to meet the needs of traditional AC/DC power supplies, as well as DC/DC converters and DC/AC inverters, where achieving high power density and efficiency remains a critical challenge. Thanks to AOS’s extensive MOSFET engineering expertise, we know that the innovative capabilities of the αMOS E2™ High-Voltage Super Junction MOSFET platform and the AOTL037V60DE2 address these challenges, enabling designers of medium- to high-power applications, solar inverters, and DC/DC converters to effectively meet current and future demands for energy efficiency, durability, and cost reduction,” said Simon Yu, Senior Product Line Manager at AOS.
Key technical features:
Optimized for soft-switching topologies with exceptionally low switching losses.
Robust body diode with reduced Qrr for demanding, high-stress applications.
Enhanced robustness with strong UIS, inrush current handling, and ample SOA capabilities.
Designed to prevent self-turn-on, ensuring reliable operation under dynamic conditions.
Suitable for Totem Pole PFC, LLC, PSFB, and CrCM H-4/Inverter Cycle applications.
Availability and Pricing:
The AOTL037V60DE2 (600V 37mΩ TOLL) is available in production quantities with a 16-week lead time. The unit price for orders of 1,000 pieces is $5.58.
