Supplied in standard TO-247 packages, these devices offer best-in-class performance for industrial and energy-saving applications.
The new Gen8 devices are available for currents from 8A to 60A with a typical VCE(ON) of 1.7V and a short-circuit response time of 10µs to reduce power dissipation, resulting in increased power density and superior robustness.
The new technology provides smoother turn-on characteristics for motor drive applications by minimizing dv/dt to reduce EMI and overvoltage, while also increasing reliability and robustness. Precise parameter distribution offers excellent current sharing when multiple IGBTs are connected in parallel. The thin-wafer technology improves thermal resistance, and the maximum junction temperature reaches 175°C.
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- Category: Integrated Circuits
1200V Gen8 IGBT in standard TO-247 packages
International Rectifier introduces a new generation IGBT (Insulated Gate Bipolar Transistor) technology platform. The 8th Generation (Gen8) 1200V IGBT platform utilizes IR's latest generation trench gate field stop technology
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