This package, with its compact 14 mm x 18.5 mm form factor, combines the advantages of SMD mounting with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation. This launch responds to the growing demand for a wide range of high-power (industrial) discrete SiC MOSFET applications that leverage superior cooling to deliver exceptional thermal performance. These switches are ideal for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible power supplies (UPS). They are also well-suited for electric vehicle charging infrastructure, including charging stations.
The X.PAK package further improves the thermal performance of Nexperia's SiC MOSFETs by reducing the negative impacts of heat dissipation through the PCB. In addition, Nexperia's X.PAK package enables low inductance for surface-mount components and supports automated board assembly.
The new X.PAK packaged devices offer the best figures of merit (FoM) known for Nexperia SiC MOSFETs, with RDS(on) being a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers focus on the nominal value of this parameter and neglect the fact that it can increase by more than 100% as device operating temperatures rise, resulting in significant conduction losses. Nexperia SiC MOSFETs, on the other hand, offer industry-leading temperature stability, with a nominal RDS(on) value that increases by only 38% over an operating temperature range of 25°C to 175°C.
“The introduction of our SiC MOSFETs in the X.PAK package represents a significant advancement in thermal management and power density for high-power applications,” says Katrin Feurle, Senior Director and Head of Discrete SiC Modules and Components at Nexperia. “This new top-cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”.
The initial portfolio includes products with RDS(on) values of 30, 40, and 60 mΩ (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), and a 17 mΩ product will be launched in April 2025. Later in 2025, a portfolio of automotive SiC MOSFETs in X.PAK packages will be launched, along with other RDS(on) classes such as 80 mΩ.
