The new device is suitable for a wide range of applications, such as switched-mode power supplies in industrial equipment, including applications in communication base stations and data centers.
The new TPH9R00CQH MOSFET has a very low drain-source turn-on resistance (RDS(ON)) of only 9.0 mΩ (max. @ VGS=10V). This represents a reduction of approximately 42% compared to the existing 150V product (TPH1500CNH), which is based on the current-generation U-MOSVIII-H process. Key figures of merit (FoM), including RDS(ON) x QSW and RDS(ON) x QOSS, have been reduced by approximately 20% and 28%, respectively, thus improving performance.
Load characteristics have been improved through careful optimization of the device structure. With a total gate charge (Qg) of only 44 nC and a gate switching charge (QSW) of 11.7 nC, the device offers excellent performance, especially in high-speed applications.
The new TPH9R00CQH offers two surface-mount device (SMD) package options: SOP Advance (5.0 mm x 6.0 mm) and SOP Advance(N) (4.9 mm x 6.1 mm), which can be selected to meet the needs of any application.
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- Category: Integrated Circuits
Toshiba U-MOSX-H 150V N-channel power MOSFET
Toshiba Electronics Europe GmbH ("Toshiba") has launched a new 150V N-channel power MOSFET that utilizes the latest generation U-MOSX-H process to reduce losses. Furthermore, voltage spikes between the drain and source during switching have been reduced, thus improving EMI performance within switched-mode power supplies.
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