Nexperia announces the volume availability of its second-generation 650V power GaN FET family, offering significant performance advantages over previous technologies and competing devices. With an RDS(on) performance of up to 35 mΩ (typical), the new power GaN FETs are targeted at single-phase AC/DC and DC/DC industrial switched-mode power supplies (SMPS) from 2 kW to 10 kW, particularly server and telecom power supplies that must meet the 80 PLUS® Titanium efficiency standard. The devices are also well-suited for solar inverters and servo drives in the same power range.
Available in a TO-247 package, the new 650V H2 power GaN FETs offer a 36% size reduction for a given RDS(on) value, improving stability and efficiency.

The cascaded configuration eliminates the need for complex drivers, accelerating time to market. The devices deliver outstanding performance in both hard-switching and soft-switching configurations, giving designers maximum flexibility.
Dilder Chowdhury, Strategic Marketing Director for GaN at Nexperia, explains: “Titanium is the most demanding of the 80 PLUS® specifications, requiring >91% efficiency under full-load conditions (>96% at 50% load). Achieving this level of performance in server power applications operating at 2 kW and above, using conventional silicon components, is complex and challenging. Nexperia’s new GaN power FETs are perfectly suited to an elegant, bridgeless totem pole configuration that uses fewer components and reduces both physical size and costs.”
Nexperia’s GAN041-650WSB GaN FETs are now available in high volume.

Product data sheets and quick learning videos.
Designers can see Nexperia's GaN FETs in action by visiting the Nexperia booth at PCIM Digital Days from May 3-7.