SiC Schottky Barrier Diodes (SBDs)
ROHM's SCS series of high-performance SiC Schottky Diodes (SBDs) are a new class of silicon carbide diodes that offer low forward voltage and fast recovery time, leading to increased power conversion efficiency. Unlike Si-based fast recovery diodes where the recovery time (trr) increases with temperature, SiC devices maintain constant characteristics over a wide temperature range, resulting in better performance under real-world conditions. For example, the 10A SBD has a forward voltage (VF) of 1.5V at 25°C and 1.6V at 150°C. A low VF reduces conduction loss, while the ultra-short reverse recovery time (15 ns) facilitates high-speed switching and minimizes connection loss. SiC diodes are ideal for PFC/power supplies, solar panel inverters, uninterruptible power supplies (UPS), air conditioners, and other products.
MOSFETs
achieves high voltage withstand, low on-resistance, and high switching speed in a high-heat dissipation package, contributing to device miniaturization and lower power consumption for increased efficiency. Furthermore, the low on-resistance and compact chip size ensure low capacitance and gate loading. The series is being expanded and optimized for next-generation devices.
This makes them ideal devices for a wide range of applications, such as PFC (Power Factor Correction) circuits, converters, and inverters for energy conversion. MOSFETs are also suitable for power converters, such as those used in EVs/HVs and industrial units.
