The BD7682FJ-LB enables the easy implementation of SiC MOSFETs in an AC/DC converter. AC/DC converter design has proven challenging when using discrete configurations due to the large number of components required. In contrast, ROHM's latest product provides a highly integrated solution and sets new standards for energy savings and miniaturization, while supporting the adoption of SiC power semiconductors that deliver advanced levels of efficiency and performance.
Compared to silicon MOSFETs used in conventional AC/DC converters, SiC MOSFETs enable AC/DC converters with up to 6% higher energy efficiency. Furthermore, they eliminate the need for heat dissipation components (e.g., in 50W power supply systems), resulting in more compact systems. The BD7682FJ-LB specification also includes multiple protection features that allow for high voltage support up to 690 Vac, making them ideal for general industrial equipment while also improving reliability.
In recent years, there has been a growing trend toward energy conservation across all sectors. This includes high-voltage industrial equipment applications. Achieving this goal requires the adoption of advanced power semiconductors and integrated power supply circuits. Among these, SiC power semiconductors are expected to gain ground over silicon solutions due to their higher voltage capabilities, greater energy savings, and more compact form factor.
However, until now there has been no control IC capable of extracting sufficient performance from SiC MOSFETs, particularly in AC/DC converter systems. As a result, designers face numerous challenges related to power consumption and stability in a variety of high-power applications.
To meet these needs, ROHM leverages proven analog technology combined with expertise in SiC power semiconductors to develop the industry's first AC/DC converter controller specifically designed to control SiC MOSFETs. Looking ahead, ROHM will continue to pioneer industry-leading solutions, including the development of new integrated AC/DC converter control circuits with integrated SiC MOSFETs.
Key Features
1. Maximizes SiC MOSFET Performance with Innovative Energy Savings
The BD7682FJ-LB integrates an optimized gate control circuit for SiC MOSFET drives by combining analog design technology with expertise in SiC power semiconductor development. Furthermore, a quasi-resonant system offers lower noise and higher efficiency compared to conventional PWM methods, making it possible to maximize the performance of SiC MOSFETs used in AC/DC converters, resulting in significant energy savings.
2. SiC MOSFETs contribute to unparalleled miniaturization.
Unlike conventional silicon MOSFETs, the adoption of SiC MOSFETs in AC/DC converters eliminates the need for heat dissipation components, contributing to smaller, lighter AC/DC converter designs. Support for higher switching frequencies (i.e., 120 kHz) is also ensured, expanding applicability while improving efficiency.
3. Multiple protection circuits support high-voltage operation up to 690 Vac.
Several protection circuits enable high-voltage operation in AC/DC converters up to 690 Vac – ideal for general 400 Vac industrial applications. In addition to overvoltage protection for the supply voltage pin and brown in/out countermeasure (undervoltage) for the input voltage pin, overcurrent and secondary overvoltage protection functions are also included, allowing continuous operation in industrial equipment while significantly improving reliability.
Advantages of SiC MOSFETs:
SiC MOSFETs offer several advantages over silicon MOSFETs in the high-voltage region, including low switching and conduction losses, high-power compatibility, and greater resistance to temperature changes. Leveraging these benefits makes it possible to improve power conversion efficiency, miniaturize components for heat dissipation, increase operating frequency to support smaller inductors, and more, resulting in increased energy savings, fewer components, and a smaller mounting area.
