The 0.9 mΩ, 220 A DC-rated BUK9J0R9-40H MOSFET satisfies applications up to 1.2 kW and is also more cost-effective than the larger D2PAK devices that were the previous best solution.
In addition to a reduced RDS (on), the new devices also feature an improved 220 A DC current rating, a first for the automotive SO8 power footprint. This allows for higher power density in a smaller footprint, which is especially valuable for safety-critical automotive applications requiring redundant dual circuits. The use of superjunction technology provides increased avalanche capability and a safe operating area for improved fault performance.
According to Norman Stapelberg, Product Marketing Manager: “Nexperia is the only company with a low-voltage superjunction MOSFET platform. In terms of reliability and overall performance, Nexperia is the market leader: the robust Trench 9 superjunction technology combined with the ultra-robust LFPAK56 and LFPAK56E packages gives engineers the confidence to use this device in their safety-critical designs.”
The LFPAK56 Trench 9 MOSFETs facilitate easy paralleling for high-current applications. The devices are suitable for automotive functions such as motor control (brushed and brushless) for power steering, transmission control, ABS, ESC, pumps (water, oil, and fuel), fan speed control, reverse battery protection, and DC/DC converters.
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- Category: Integrated Circuits
Automotive MOSFET with the lowest RDS(on) up to 0.9 mΩ
Nexperia has announced the launch of the company's lowest RDS (on) certified MOSFETs . The 40V AEC-Q101 Trench 9 automotive "Superjunction" MOSFETs in the robust and electrically and thermally efficient LFPAK56E offer a footprint reduction of up to 81% compared to traditional bare-die module solutions such as the D2PAK or D2PAK-7 devices.
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