The TLX9152M consists of an infrared (IR) emitting diode optically coupled to a photo-MOSFET. Its fast response time (TON/TOFF) of 1 ms (max.) is a critical specification for design engineers. The trigger current is 3 mA (max.), which reduces system power consumption. Furthermore, the off-state current (IOFF) of this device is 100 nA (max.) at room temperature, meaning it consumes minimal power when idle. The IR LED has a forward current (IF) of 20 mA (max.), while its photosensing element has an on-state current (ION) of 50 mA.

For a 400 V automotive battery system, the test voltage for the withstand voltage test (Hi-Pot test) on the assembly is 1800 V, and the same output withstand voltage as the test voltage can be achieved by using two of the products. Furthermore, the TLX9152M is housed in an SO16L-T package (Toshiba package code 11-10N1A), commonly used for high-voltage photoradar systems. Toshiba's existing product, the TLX9160T, housed in the same package, offers a supported output voltage of 1500 V on 800 V battery systems when the test voltage is set to 2600 V. Therefore, this combination allows a 400 V and an 800 V battery system to share the same board.

The TLX9152M is supplied in an SO16L-T package, a modified version of the SO16L with only 12 pins. It has a space-saving form factor of 10.3 mm x 10.0 mm x 2.45 mm, which facilitates system integration. When used in 1 kV systems, this normally open (1-Form-A) device features creepage and clearance distances of 5 mm on its output side, ensuring effective insulation. The device operates over a wide temperature range of -40°C to +125°C and is fully qualified according to AEC-Q101 for automotive applications.

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