The AUIRB24427S delivers a very high output current exceeding 6A per channel across the entire temperature range and is designed for controlling large IGBT and MOSFET gates in discrete modules or packages. Due to the device's extremely low output impedance in both on- and off-mode, power losses are also very low, enabling operation in harsh, high-temperature environments such as the power supply stages in hybrid vehicles, either as a primary or secondary driver.
Supplied in a simple PSOIC-8N package and featuring ultra-low power dissipation, the AUIRB24427S effectively addresses the challenge of controlling large IGBTs and MOSFETs used in switched-mode power supply applications, providing a smaller, simpler, and more robust solution than currently available discrete options.
The AUIRB24427S is supplied in a thermally enhanced PSOIC-8N package that provides significantly greater heat dissipation than standard SMD DIL packages, enabling operation at considerably higher ambient temperatures. Furthermore, the rail-to-rail output stage, which utilizes P-channel MOSFETs on the high-side, allows for a low internal voltage drop to reduce power dissipation. The AUIRB24427S also features a maximum output resistance of 650 mΩ for both consumption and supply at 125°C.
This approved car device is lead-free and RoHS compliant.
