The MN63Y1221-E1 product benefits from an integrated 8Kbit FeRAM non-volatile memory with fast write speeds and low power consumption, provides an I2C host interface, and comes in a small SON8 package.
The NFC tag's built-in 8Kbit FeRAM memory allows for 100 million write cycles and can be protected with a 128-bit password against unauthorized access. The component also features a power harvesting output that allows the host device to be powered by energy harvested from the NFC magnetic field. The supply voltage range is from 1.7V to 3.6V. The MN63Y1221-E1 is already in serial production and is available directly from Panasonic and through the distributor Rutronik.
Comments from Thomas Portenlänger, Technical Product and Marketing Manager at Panasonic Automotive & Industrial Systems Europe: "Our new NFC tag IC MN63Y1221-E1 offers three communication modes: RF, serial, and tunnel (tunnel mode enables direct communication between the reader/writer and the host). Combined with its global interoperability, this makes the new device ideal for use in numerous applications.".
