Andrea Bricconi, Commercial Director at CGD, states: “The explosive growth of AI is driving a significant increase in energy consumption, prompting data center system designers to prioritize the use of GaN for efficient, high-power power solutions. This new Power GaN IC series is another step in CGD’s efforts to help our customers and partners achieve and exceed the 100 kW/rack power density in data centers required by the latest TDP (Thermal Design Power) trends for high-density computing.” Regarding motor control inverters, developers are turning to GaN to reduce heat and achieve smaller, more durable power systems. These are just two examples of the markets CGD is now aggressively targeting with these new high-power ICeGaN ICs. The simplified gate driver design and reduced system costs, combined with advanced, high-performance packaging, make the P2 series ICs an excellent choice for these applications.
ICeGaN integrated circuits, which incorporate an on-chip Miller clamp to eliminate losses during fast switching and 0V turn-off to minimize reverse conduction losses, outperform discrete e-Mode GaN integrated circuits and other existing technologies. The new packages offer improved thermal resistance of only 0.28 K/W—again, equivalent to or better than anything currently available on the market—and the dual-gate pin arrangement of the double-sided DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB design and easy paralleling for scalability, enabling customers to tackle multi-kW applications with ease. The new packages are also designed to improve productivity, with wettable edges to simplify optical inspection.
The new P2 series ICeGaN power integrated circuits are now undergoing testing. The family includes four devices with RDS(on) levels of 25 mΩ and 55 mΩ, power ratings of 60 A and 27 A, respectively, in 10 x 10 mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. Like all CGD ICeGaN products, the P2 series can be driven by any standard MOSFET or IGBT driver.
Two demonstration boards incorporate the new P2 devices: a demonstration board of a three-phase automotive inverter, developed in collaboration with the French public R&D institute IFP Energies nouvelles, and a demonstration board of power factor correction of a 3 kW totem.
The new P2 series ICeGaN GaN power integrated circuits and demonstration boards were publicly presented at the PCIM trade fair, at CGD booth no. 7643, Nürnberg Messe, Nuremberg, Germany, from June 11 to 13, 2024.
