Using Toshiba's advanced epitaxial process, the new DTMOS IV-H series of superjunction MOSFETs is ideal for applications requiring high reliability, energy efficiency, and a compact design. They are applicable to high-efficiency switched-mode power supplies for servers and telecom base stations, as well as power conditioners for photovoltaic inverters.
The new series achieves high-speed switching performance while maintaining the low "ON" resistance of conventional DTMOS IVs—all without power loss. This is achieved through reduced gate-drain parasitic capacitance (typical Ciss ranges from 3000 to 6500 pF), which also contributes to improved energy efficiency and product size reduction.
Optimized gate pattern results in a 45 percent reduction in gate-drain load (typical Qg ranges from 65 to 135 nC) compared to conventional DTMOS IVs. The new product line features low on-resistance (RDS(ON) MAX at VGS=10V ranges from 0.088 to 0.040 Ω), and the devices exhibit only a slight increase in on-resistance at high temperatures due to the epitaxial manufacturing process. Current draw ranges from 6.8 to 30.8 A.
The new DTMOS IV-H series is currently available in T0-247 packages, with additional package options, including 8x8 mm DFN, T0-220, and T0-220SIS, coming soon.
- Details
- Category: Integrated Circuits
High-speed switching MOSFET for power supply
The new DTMOS IV-H series includes the TK31N60X, TK39N60X and TK62N60X, and is based on the fourth generation of the DTMOS IV series of 600V super junction MOSFETs.
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