Built on Vishay's proprietary Trench PT IGBT technology, the VS-GP100TS60SFPbF, VS-GP250SA60S, VS-GP300TD60S, and VS-GP400TD60S provide extremely low collector-emitter voltages as low as 1.10 V and turn-off switching power consumption of 11 mJ for output inverter stages.
With their Trench PT IGBT construction, these Vishay Semiconductors devices achieve a smaller size than planar IGBTs, providing designers with higher current density and lower thermal resistance (junction-to-case) without compromising performance. The low collector-emitter voltage enables extremely low conduction losses, while their turn-off switching power consumption is 50% lower than previous-generation devices, increasing efficiency and long-term reliability.
The VS-GP100TS60SFPbF, VS-GP300TD60S, and VS-GP400TD60S half-bridge IGBTs combine Trench PT IGBTs with HEXFRED® antiparallel diodes and FRED PT® diodes in a single INT-A-PAK package and a dual INT-A-PAK package with a very low 17 mm profile. The VS-GP250SA60S single-switch module features an SOT-227 package, offering very low parasitic inductance of ≤ 5 nH typical, and is E78996 UL-approved.
The RoHS-compliant modules feature operating frequencies up to 1 kHz, 600 V collector-emitter voltages, and continuous collector currents from 100 A to 400 A. The devices can be mounted directly to heatsinks and offer low EMI.

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