A first SFPMOS™ (Shielded Field-Plated Mesh MOSFET™) product, it has a nominal on-state resistance Rds(on) of only 4 mOhms at a gate voltage of U_GS = 1V. The breakdown voltage U_BR is 40V. Below this threshold, leakage currents over a wide temperature range are extremely low. At an operating temperature of 25°C, they are well below 1 microampere and reach only 1 mA at 150°C. Therefore, SFPMOS™ are particularly well-suited for use in mobile devices or where long battery life is important.
The SFPMOS™ series consists of power transistors with breakdown voltages from 8V to 200V. They are available in a variety of packages, including SC-75/SOT-416, 3x3 PQFN, and 5x6 PQFN.
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- Category: Integrated Circuits
MOSFET for low voltage applications
MaxPower introduces an innovative series of sublogic-level power transistors. MOSFETs that can reliably handle high currents at ultra-low threshold voltages are rare. MaxPower Semiconductor Inc., a manufacturer of innovative power semiconductors and a strategic partner of Finepower, has developed a new family of power transistors that also switch at the sublogic level.
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