Nexperia has announced the addition of 12 new devices to its ever-expanding portfolio of GaN e-mode FETs. This latest version aims to meet the growing demand for more efficient and compact systems. The new low- and high-voltage GaN e-mode FETs target multiple markets, including consumer, industrial, server/computing, and telecommunications, with a particular focus on high-voltage, low-to-medium power and low-voltage, low-to-high power use cases.
Since the introduction of e-mode GaN FETs in 2023, Nexperia remains the only supplier in the industry to offer devices in both cascode or d-mode and e-mode, providing designers with convenience when facing varying challenges during the design process.
The latest additions to Nexperia's GaN e-mode FET portfolio include new 40V bidirectional low-voltage devices (RDSon
Nexperia's GaN FET e-mode technology's superior switching performance is due to its exceptionally low QG and QOSS values.
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