NextPower 100V MOSFETs are next-generation components from Nexperia recommended for high-efficiency, high-reliability switching applications. With 50% lower R<sub>DS(on) </sub> and a strong avalanche power rating, they are ideal for power supply, telecommunications, and industrial designs, and are particularly well-suited for USB Type-C chargers and adapters, as well as 48V DC-DC adapters. These devices feature low diode losses with a low Q<sub>RR </sub> as low as 50 nanocoulombs (nC), resulting in lower I<sub>RR</sub> (reverse recovery current), lower peak voltages (V<sub>peak</sub>), and reduced ringing, enabling further optimized dead time.
Comments from Mike Becker, Product Manager for Power MOSFETs: "Qrr is an often overlooked parameter, even though it can have a significant effect on many aspects of design. A low peak volume means reduced EMI, while optimized dead time further increases efficiency, which is our goal at Nexperia. We have demonstrated that low Qrr is beneficial for both functions.".
The new NextPower 100V MOSFETs are available in three packages: TO220 and I2PAK through-hole devices, and the widely acclaimed LFPAK56 (SMT) package. All package variants have amaximum Tj of 175°C and fully comply with the extended temperature range requirements of IPC9592, making the NextPower 100V MOSFETs particularly suitable for telecommunications and IT applications.
