NXP's GaN multi-chip module series, combined with the industry's first superior cooling solution for RF power, helps reduce not only the radio's thickness and weight by more than 20 percent, but also the carbon footprint for manufacturing and deploying 5G base stations.
“Top-side cooling represents a significant opportunity for the wireless infrastructure industry, as it combines high power capabilities with advanced thermal performance to enable a smaller RF subsystem,” said Pierre Piel, Vice President and General Manager of Radio Power at NXP. “This innovation offers a solution for deploying more environmentally friendly base stations, while still enabling the network density needed to realize the full performance benefits of 5G.”
NXP's new top-cooled devices offer significant design and manufacturing advantages, such as eliminating dedicated RF shielding, using cost-effective and simplified printed circuit boards, and separating thermal management from the RF design. These features help network solution providers create thinner and lighter 5G radios for mobile network operators while reducing their overall design cycle.
NXP's first series of top-cooled RF power modules is designed for 32T32R 200W radios covering 3.3 GHz to 3.8 GHz. The devices combine the company's proprietary LDMOS and GaN semiconductor technologies to enable high gain and efficiency with broadband performance, delivering 31 dB of gain and 46 percent efficiency over 400 MHz of instantaneous bandwidth.
The A5M34TG140-TC, A5M35TG140-TC, and A5M36TG140-TC products are now available. The A5M36TG140-TC will be compatible with NXP's RapidRF reference board series. For more information, please see our fact sheet at NXP.com/TSCEVBFS or contact NXP's worldwide sales department.
