Based on the capabilities of the complete supply chain and advanced encapsulation capabilities at Rohm's facilities, the SiC Half-Bridge module integrates mass-produced trench-type SiC MOSFETs and SiC SBDs in the same space as the previous modules.
ROHM has pioneered commercial power modules equipped with SiC MOSFETs and SiC SBDs, and successfully mass-produced the industry's first trench-type MOSFET using a proprietary structure, ensuring long-term reliability. The new module implements MOSFETs with its advanced UMOS structure, eliminating the JFET region and maximizing SiC characteristics. It delivers the lowest drain-source resistance along with high-speed switching performance, and thanks to the extremely low Vf and fast recovery performance of the integrated SiC SBDs, it has virtually no recovery loss Err.
As a result, the switching module achieves 77% lower losses than conventional IGBT modules and 42% lower switching losses than planar SiC modules using a second-generation DMOS-SiC structure. This not only enables high-frequency operation but also contributes to smaller cooling systems and peripheral components, which in turn paves the way for greater energy savings and miniaturization of the final product.
The new SiC module is now available.
